Cite
HARVARD Citation
Miyoshi, M. et al. (2019). A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate. Japanese journal of applied physics. p. . [Online].
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Miyoshi, M. et al. (2019). A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate. Japanese journal of applied physics. p. . [Online].