A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate. (16th April 2019)

• Record Type: Journal Article
• Authors: Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya
• Is Part Of: Japanese journal of applied physics. Volume 58:Number SC(2019)
• Publication Date: 2019-04-16
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab040c
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Single-layer AlInN films with a film thickness of approximately 300 nm were grown on a c- plane free-standing (FS) GaN substrate by metalorganic chemical vapor deposition. The result showed that a highly flat-surface AlInN film with a small root-mean-square surface roughness of less than 0.5 nm was realized by adjusting its alloy composition to an almost perfectly lattice-matched to FS-GaN. As for the highly flat-surface AlInN film, the optical constants were evaluated in whole visible wavelength by spectroscopic ellipsometry. Then, its energy bandgap energy was determined to be 3.92 eV.