Near-infrared electroluminescence from atomic layer doped Al2O3:Yb nanolaminate films on silicon. (1st July 2018)

• Record Type: Journal Article
• Authors: Ouyang, Zhongtao; Yang, Yang; Sun, Jiaming
• Is Part Of: Scripta materialia. Number 151(2018)
• Page Start: 1
• Page End: 5
• Publication Date: 2018-07-01
• Subjects: Luminescent materials -- Nanostructured materials -- Atomic layer epitaxy -- Thin films -- Al2O3; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2018.03.026
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Nanolaminate Al2 O3 :Yb films are fabricated by atomic layer deposition on silicon, from which intense 977 nm electroluminescence is obtained. By precise controlling the Yb agglomerate and the distance among Yb 3+ ions, the power density up to 2.67 mW cm −2 and external quantum efficiency of 1.8% are estimated from the nominal 1.27 at.% doped device. The charge transport is ascribed to the Poole-Frenkel conduction mechanism and the electroluminescence originates from the impact-excitation of Yb 3+ ions by hot electrons. The distance for the presence of non-radiative interaction of Yb 3+ ions in Al2 O3 matrix is concluded to be ~3 nm. Graphical abstract: Unlabelled Image