Near-infrared electroluminescence from atomic layer doped Al2O3:Yb nanolaminate films on silicon. (1st July 2018) - Ouyang, Zhongtao
Abstract: Nanolaminate Al2 O3 :Yb films are fabricated by atomic layer deposition on silicon, from which intense 977 nm electroluminescence is obtained. By precise controlling the Yb agglomerate and the distance among Yb 3+ ions, the power density up to 2.67 mW cm −2 and external quantum efficiency of 1.8% are estimated from the nominal 1.27 at.% doped device. The charge transport is ascribed to the Poole-Frenkel conduction mechanism and the electroluminescence originates from the impact-excitation of Yb 3+ ions by hot electrons. The distance for the presence of non-radiative interaction of Yb 3+ ions in Al2 O3 matrix is concluded to be ~3 nm. Graphical abstract: Unlabelled Image