Investigation of structural, electrical and optical properties of SbXW1-XSe2 single crystals. (July 2018)

• Record Type: Journal Article
• Authors: Patel, Abhishek; Pataniya, Pratik; Narayan, Som; Sumesh, C.K.; Pathak, V.M.; Solanki, G.K.; Patel, K.D.; Jha, Prafulla K.
• Is Part Of: Materials science in semiconductor processing. Volume 81(2018)
• Page Start: 108
• Page End: 112
• Publication Date: 2018-07
• Subjects: Growth of single crystals -- N-type doping -- Urbach's energy -- Sb0.1W0.9Se2 single crystal; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2018.03.020
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: This article presents systematic studies of SbX W1-X Se2 (X = 0, 0.1) single crystals grown by direct vapour transport technique. The purity and stoichiometry were tested by energy dispersive analysis of X-ray (EDAX). To explore lattice structure of grown compounds, powder X-ray diffraction was performed. A surface morphology of Sb0.1 W0.9 Se2 crystals was checked by optical microscope and scanning electron microscope. The transmission electron microscopy was also used to verify the crystallinity of grown samples. The variations of electrical resistivity parallel and perpendicular to c-axis were measured in the temperature range from 303 to 673 K. The results showed semiconducting behaviour and anisotropic charge conduction of grown single crystals. The n-type semiconducting nature was confirmed by Hall-effect measurements. The optical band gap was determined by UV–Visible-NIR spectroscopy. The Raman spectrum was also taken from grown SbX W1-X Se2 (X = 0, 0.1) single crystals using excitation of 785 nm. The obtained results suggest the substitutional doping of Sb +5 on W +4 lattice site.