Analysis of the carrier transport mechanism and barrier height formation of graphene/Zr–ZnO Schottky contact by I-V-T. (February 2020)

• Record Type: Journal Article
• Authors: Li, Yapeng; Li, Yingfeng; Zhang, Jianhua
• Is Part Of: Materials science in semiconductor processing. Volume 106(2020)
• Publication Date: 2020-02
• Subjects: Zr–ZnO films -- Graphene -- Schottky contact -- Sol-gel method -- Carrier transport mechanism -- I-V-T; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.104793
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The graphene/Zr–ZnO Schottky contacts were prepared by sol-gel method, and the electrical properties of Schottky contact were analyzed by thermionic emission model. The results showed the oxygen vacancies in ZnO films decrease due to Zr ion doping. Meanwhile, the leakage current of graphene/Zr–ZnO Schottky contact reduces and barrier height increases, which is mainly related to the reduction of defect levels at the interface owing to Zr ion doping. By the I-V-T measurement, the result showed that the barrier height increases and the ideal factor decreases with the raising of temperature from 160 K to 300 K, which can be explained by the lateral inhomogeneities of barrier height that was confirmed with gauss distribution function.