Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Aluminum Oxide thin film transistors. (February 2020)

• Record Type: Journal Article
• Authors: Jia, Lanchao; Su, Jinbao; Liu, Depeng; Yang, Hui; Li, Ran; Ma, Yaobin; Yi, Lixin; Zhang, Xiqing
• Is Part Of: Materials science in semiconductor processing. Volume 106(2020)
• Publication Date: 2020-02
• Subjects: Thin film transistor -- Oxide materials -- Electrical properties -- Saturation mobility; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.104762
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We fabricated bottom-gate thin film transistors (TFTs) with Indium-Zinc-Titanium-Aluminum Oxide (IZTiAO) active layer by radio frequency (RF) magnetron sputtering at room temperature. The structural characteristic of the IZTiAO film was investigated by X-ray diffraction (XRD). The IZTiAO TFTs fabricated under optimal conditions exhibit excellent performance with a saturation mobility (μsat ) of 32.1 cm 2 /Vs, an on/off current ratio (Ion/off ) of 8 × 10 8, an off current (Ioff ) of 5 × 10 −13 A, a low subthreshold swing(SS) of 0.23 V/dec and a threshold voltage (Vth ) of 1.2 V, respectively. The shifts of the Vth of IZTiAO TFT under positive bias stress and negative bias stress were investigated.