Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT). (January 2020)

• Record Type: Journal Article
• Authors: Lee, Jang Woo; Choi, Woo Young
• Is Part Of: Solid-state electronics. Volume 163(2020)
• Publication Date: 2020-01
• Subjects: Tunnel field-effect transistor (TFET) -- Band-to-band tunneling (BTBT) -- Gate-normal tunneling -- Gate-induced source depletion -- Negative differential transconductance (NDT); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107659
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Two major problems in state-of-the-art MOSFETs; size and power reduction problems. Breakthrough by novel functionality; Negative differential transconductance. Negative differential transconductance in tunnel field-effect transistors (TFETs) Design guideline of TFETs considering negative differential transconductance. Abstract: A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed. The introduction of the source depletion to the gate-normal TFETs leads to negative differential transconductance. It is also confirmed that the NDT of the proposed gate-normal TFET is successfully enhanced by modulating gate-induced source depletion effects.