Low power-high speed performance of 8T static RAM cell within GaN TFET, FinFET, and GNRFET technologies – A review. (January 2020)

• Record Type: Journal Article
• Authors: Patnala, Mounica; Yadav, Avinash; Williams, John; Gopinath, Anoop; Nutter, Brian; Ytterdal, Trond; Rizkalla, Maher
• Is Part Of: Solid-state electronics. Volume 163(2020)
• Publication Date: 2020-01
• Subjects: GNRFET -- TFET -- FinFET -- ULSI -- 8T SRAM -- 6T SRAM; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107665
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Recent ULSI technology development emphasizes both silicon and graphene-based devices and system performance in terms of their low power and high switching speed. With Moore's law scaling having reached the limits of physics due to ballistic effects, efforts are moving towards nano scale materials and devices such as TFETs and GNRFETs. Still, recent developments with 7 nm lithography-based silicon devices have cited exciting results. The successful development of FinFET devices in integrated systems has been a breakthrough for the semiconductor industry. Research efforts were emphasized for new nanoscale materials such as Graphene, GaN, and Carbon nanotubes, as alternative devices for ULSI integrated system design. This paper provides a cumulative review for these three nanoscale devices: FinFET, TFET, and GNRFET. The study focuses on an 8T SRAM cell as geared towards low power and high-speed features that are suitable for high speed computers, wireless communications, and medical devices. The study covers device theory, models, and simulation. The study has showed evidence that the power consumption for both TFET and GNRFET -based systems features superior low power performance of a ratio 1:0.24 as taken for the Static T Cell for 20 nm scale devices. The practical model of the FinFET is verified and used by industry, while the practical model of both TFET and GNRFET are still in the prototype stage.