Degradation of AlInAs/InGaAs/InP quantum cascade lasers due to electrode adhesion failure. (August 2019)

• Record Type: Journal Article
• Authors: Pierścińska, D.; Pierściński, K.; Sobczak, G.; Gutowski, P.; Płuska, M.; Bugajski, M.
• Is Part Of: Microelectronics and reliability. Volume 99(2019)
• Page Start: 113
• Page End: 118
• Publication Date: 2019-08
• Subjects: Quantum cascade laser -- Thermoreflectance spectroscopy -- Degradation mechanisms -- Electrode adhesion; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2019.06.003
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper external degradation type of failure of Quantum Cascade Laser is analyzed. The failure mode discussed in the work is connected with the damage of the gold, top electrode. We show how fabrication faults translate to degradation of device and monitor temperature distributions as well as electrical characteristics of the device during the process. The aim of this research is to demonstrate how external degradation process develops in case of AlInAs/InGaAs/InP quantum cascade lasers. Highlights: QCL failure not resulting from high current load Comprehensive analysis of degradation of QCLs reveals the mechanism. Complementary techniques used to find the source of degradation Dielectric and metal layers deposition critical for stable operation of device Device failure begins in region without current injection.