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APA Citation
Ding, C., Dai, Y., Ma, C., Lu, W., Wang, F., & Zeng, Y. (2019). the influence of the resistance layer dimension and interface doping on the electrical properties of aGNR/NiO/aGNR-structured resistive random access memory. Materials research express, 6, . http://access.bl.uk/ark:/81055/vdc_100092787437.0x000007