Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H–SiC by metal-organic chemical vapor deposition. (September 2015)

• Record Type: Journal Article
• Authors: Tao, Pengcheng; Liang, Hongwei; Xia, Xiaochuan; Liu, Yang; Jiang, Jianhua; Huang, Huishi; Feng, Qiuju; Shen, Rensheng; Luo, Yingmin; Du, Guotong
• Is Part Of: Superlattices and microstructures. Volume 85(2015)
• Page Start: 482
• Page End: 487
• Publication Date: 2015-09
• Subjects: Silicon carbide -- Ultraviolet light-emitting diode -- Distributed Bragg reflector -- SiNx interlayer; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2015.05.035
• Languages: English
• ISSNs: 0749-6036

Abstract

Highlights: Crack-free UV-LED with 30 pairs AlGaN/GaN DBRs grown on 6H–SiC substrate by MOCVD. A thin SiN x interlayer was introduced to reduce the threading dislocation density. The light output power for UV-LED with DBRs was improve about 56% at 350 mA. The DBRs is not only improved efficiency of UV-LEDs, but also can be applied to RCLEDs and VCSELs. Abstract: Near-ultraviolet (UV) InGaN/AlGaN multiple quantum well (MQW) LEDs with 30 pairs AlGaN/GaN distributed Bragg reflectors (DBRs) were grown on 6H–SiC substrate by metal-organic chemical vapor deposition. A thin SiN x interlayer was introduced between the DBRs and n-GaN layer of the LED to reduce the threading dislocation density and result in enhancement the internal quantum efficiency ( ηint ) of the InGaN/AlGaN LED. The result indicates that the light output power for the LED with DBRs and SiN x interlayer was approximately 56% higher (at 350 mA) than the LED without DBRs and SiN x interlayer on 6H–SiC substrate, and this significant improvement in performance is attributed not only to the light extraction enhancement via the DBRs but also due to improve epilayer crystalline quality.