Cite
HARVARD Citation
Lin, J. et al. (2019). Printing of Quasi‐2D Semiconducting β‐Ga2O3 in Constructing Electronic Devices via Room‐Temperature Liquid Metal Oxide Skin. Physica status solidi. 13 (9), p. n/a. [Online].
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Lin, J. et al. (2019). Printing of Quasi‐2D Semiconducting β‐Ga2O3 in Constructing Electronic Devices via Room‐Temperature Liquid Metal Oxide Skin. Physica status solidi. 13 (9), p. n/a. [Online].