Printing of Quasi‐2D Semiconducting β‐Ga2O3 in Constructing Electronic Devices via Room‐Temperature Liquid Metal Oxide Skin. Issue 9 (27th May 2019)

• Record Type: Journal Article
• Authors: Lin, Ju; Li, Qian; Liu, Tian-Ying; Cui, Yuntao; Zheng, Han; Liu, Jing
• Is Part Of: Physica status solidi. Volume 13:Issue 9(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-27
• Subjects: 2D semiconductors, β‐Ga2O3 -- thin-film characterization -- electronic devices -- liquid metals -- metal oxides; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201900271
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Quasi‐2D β‐Ga2 O3 is a rediscovered metal‐oxide semiconductor with the advantage of an ultrawide bandgap of 4.6–4.9 eV. It is reported to be a promising material for next‐generation power and radio‐frequency electronics. However, realizing macroelectronics based on β‐Ga2 O3 film is challenging due to the nonuniformity and improper thickness of the film. Herein, a straightforward and rapid impact fabrication method for depositing high‐quality β‐Ga2 O3 films is introduced. Structural and film properties of the deposited β‐Ga2 O3 are characterized using scanning electron microscopy, X‐ray diffraction, and atomic force microscopy. To illustrate the applicability of the deposited β‐Ga2 O3 in constructing electronic devices, β‐Ga2 O3 ‐based field‐effect transistors (FETs) are fabricated with a source–drain spacing of 400 μm. Films of β‐Ga2 O3 exhibit a good performance with carrier mobilities as high as 21.3 cm 2 V –1 s –1, transconductances of 1.4 μS, and on/off current ratios of 10 4 . The device performances indicate a big potential of β‐Ga2 O3 for future power device applications. The method paves the way for future application of β‐Ga2 O3 in electronics. It also provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices. Abstract : A uniform and compact semiconductor β‐Ga2 O3 film is deposited on the SiO2 /Si substrate through a simple impact process using a liquid metal. β‐Ga2 O3 ‐based field‐effect transistors (FETs) are fabricated, which exhibit good performance and device‐to‐device uniformity. This work provides an important approach to prepare 2D gallium oxide film semiconductors for future scalable, low‐cost, and high‐performance electronics.