Millimeter-wave AlGaN/GaN HEMTs breakdown voltage enhancement by an air-bridge recessed source field plate (RSFP). (October 2019)

• Record Type: Journal Article
• Authors: Zhang, S.; Wei, K.; Ma, X.H.; Zhang, Y.C.; Asif, M.; Liu, G.G.; Huang, S.; Zheng, Y.K.; Wang, X.H.; Niu, J.B.; Lei, T.M.; Liu, X.Y.
• Is Part Of: Solid-state electronics. Volume 160(2019)
• Publication Date: 2019-10
• Subjects: GaN HEMTs -- Breakdown voltage -- Parasitic capacitance -- Field plate; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107629
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A novel RSFP for mm-wave GaN HEMT is proposed, resulting in a reduced peak E-field. Millimeter-wave AlGaN/GaN HEMT with RSFP show higher VBR and lower current collapse. A high frequency performance is maintaining for the device after integrating RSFP. Abstract: In this paper, an innovative air-bridge recessed source field plate is implemented into the fabrication of high voltage mm-wave GaN high-electron-mobility transistors (HEMTs). The device integrates a metal field plate (FP) and an air-bridge FP that locate over the gate region and land between the gate and drain. The reduced peak electric field contributes to a three-terminal breakdown voltage of 144 V for GaN HEMTs with L SD = 2.4 μm, which is 96 V for the normal mm-wave device. One order of magnitude lower in off-state leakage currents and well suppressed current collapse are also achieved. Particularly, slight increase in C gs and C gd was obtained after applying the air-bridge field plate, keeping the high frequency characteristic of mm-wave devices. The technology might attract significant attention in mm-wave GaN HEMTs.