A Computationally Efficient Quantum-Corrected Poisson Solver for accurate Device Simulation of Multi-Gate FETs. (October 2019)

• Record Type: Journal Article
• Authors: Ojha, Apoorva; Mohapatra, Nihar R.
• Is Part Of: Solid-state electronics. Volume 160(2019)
• Publication Date: 2019-10
• Subjects: Poisson solver -- Poisson-Schrodinger solver -- Dispersion relationship -- Quantum mechanical effects -- Density of states -- Device simulator -- Geometrical confinement -- MuGFETs; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107625
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The quantum mechanical (QM) effects are significant in extremely scaled multi-gate MOS devices. A computationally efficient and accurate methodology to capture QM effects is needed. In this paper, a quantum corrected Poisson solver is developed. The quantum confinement due to geometry of the device and the electric field are captured. The developed model is more accurate in comparison to the existing QM correction models. Abstract: The quantum mechanical effects have become an important phenomenon in extremely scaled multi-gate MOS devices and therefore the self-consistent solution of Poisson's and Schrodinger's equation (P-S solver) is needed to get accurate charge and potential profiles. The commercial device simulators take impractically high computation time for the P-S solver. So, there is a need for a computationally efficient methodology which is fast as well as accurate. In this paper, a quantum corrected Poisson solver is developed which serves this purpose. The effects of quantum confinement due to geometry of the device and the electric field are captured accurately by modifying the density of states and incorporating correction in carrier charge profiles. The developed model is physics-based, accurate, and computationally efficient in comparison to the existing quantum correction models.