Cite
HARVARD Citation
Oh, S. et al. (2017). Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. Applied physics express. p. . [Online].
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Oh, S. et al. (2017). Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. Applied physics express. p. . [Online].