Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization. (12th December 2016)

• Record Type: Journal Article
• Authors: Oh, Seung Kyu; Jang, Taehoon; Pouladi, Sara; Jo, Young Je; Ko, Hwa-Young; Ryou, Jae-Hyun; Kwak, Joon Seop
• Is Part Of: Applied physics express. Volume 10:Number 1(2017)
• Publication Date: 2016-12-12
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.016502
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: To improve wafer utilization efficiency and heat dissipation performance, this paper proposes multilevel metallization-structured, lateral-type AlGaN/GaN heterostructure field-effect transistors (HFETs) on a 150 mm Si substrate using photosensitive polyimide (PSPI) as the intermetal dielectric layer. The maximum drain current of the HFETs is 46.3 A, which is 240% higher than that of conventional AlGaN/GaN HFETs with the same die size. Furthermore, the drain current drop of the HFETs under high-bias operation is reduced from 14.07 to 8.09%, as compared to that of conventional HFETs.