Cite
HARVARD Citation
Ohba, T. et al. (n.d.). Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach. Japanese journal of applied physics. p. . [Online].
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Ohba, T. et al. (n.d.). Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach. Japanese journal of applied physics. p. . [Online].