Cite
APA Citation
Cui, G., Han, D., Dong, J., Cong, Y., Zhang, X., Li, H., Yu, W., Zhang, S., Zhang, X., & Wang, Y. (n.d.). effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition. Japanese journal of applied physics, 56, . http://access.bl.uk/ark:/81055/vdc_100087635120.0x000062