Cite
HARVARD Citation
Cui, G. et al. (n.d.). Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition. Japanese journal of applied physics. p. . [Online].
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Cui, G. et al. (n.d.). Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition. Japanese journal of applied physics. p. . [Online].