Electronic structure and thermoelectric properties of PbS1-xTex (x=0, 0.25, 0.50, 0.75, 1.0) alloys: Ab initio study. (December 2018)
- Record Type:
- Journal Article
- Title:
- Electronic structure and thermoelectric properties of PbS1-xTex (x=0, 0.25, 0.50, 0.75, 1.0) alloys: Ab initio study. (December 2018)
- Main Title:
- Electronic structure and thermoelectric properties of PbS1-xTex (x=0, 0.25, 0.50, 0.75, 1.0) alloys: Ab initio study
- Authors:
- Khan, Saleem Ayaz
Azam, Sikander - Abstract:
- Abstract: We present electronic structure and thermoelectric behavior for the PbS1-x Tex (x = 0, 0.25, 0.50, 0.75, 1.0) using all electron full potential linearized augmented plane wave (FP-LAPW) method. The correct value of the band gap is achieved with fully relativistic calculation by employing spin orbit coupling to the Hamiltonian implicitly. Our study shows the interactions between Pb-s, Te-p and S-p states that play a leading role in the valance band while the Pb-p and S-p and Te-p states play a dominant role in conduction band. The thermoelectric properties discuss the variation of the electrical and thermal conductivity, Seebeck coefficient, power factor and figure of merit with temperature variation using the Boltzmann transport theory. The high-temperature figure of merit of Te doped PbS alloy have been found to be significantly greater than PbS. This improvement is associated to the ability to attain higher doping and, hence, larger electrical properties at high temperatures. Hence, it reveals that both PbS0.25 Te0.75 and PbTe can be used as promising materials for high potential thermoelectric device applications. Highlights: Complex studies of band structure for PbS1-x Tex (x = 0, 0.25, 0.50, 0.75, 1.0) have been done. With increasing the strain the band gap value is enhanced. At enhanced strain percentage, the states are moving towards the higher energy levels. Good agreement between DFT simulations and experiment is achieved. PbS1-x Tex is promisingAbstract: We present electronic structure and thermoelectric behavior for the PbS1-x Tex (x = 0, 0.25, 0.50, 0.75, 1.0) using all electron full potential linearized augmented plane wave (FP-LAPW) method. The correct value of the band gap is achieved with fully relativistic calculation by employing spin orbit coupling to the Hamiltonian implicitly. Our study shows the interactions between Pb-s, Te-p and S-p states that play a leading role in the valance band while the Pb-p and S-p and Te-p states play a dominant role in conduction band. The thermoelectric properties discuss the variation of the electrical and thermal conductivity, Seebeck coefficient, power factor and figure of merit with temperature variation using the Boltzmann transport theory. The high-temperature figure of merit of Te doped PbS alloy have been found to be significantly greater than PbS. This improvement is associated to the ability to attain higher doping and, hence, larger electrical properties at high temperatures. Hence, it reveals that both PbS0.25 Te0.75 and PbTe can be used as promising materials for high potential thermoelectric device applications. Highlights: Complex studies of band structure for PbS1-x Tex (x = 0, 0.25, 0.50, 0.75, 1.0) have been done. With increasing the strain the band gap value is enhanced. At enhanced strain percentage, the states are moving towards the higher energy levels. Good agreement between DFT simulations and experiment is achieved. PbS1-x Tex is promising thermoelectric material in the high temperature range. … (more)
- Is Part Of:
- Superlattices and microstructures. Volume 124(2018)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 124(2018)
- Issue Display:
- Volume 124, Issue 2018 (2018)
- Year:
- 2018
- Volume:
- 124
- Issue:
- 2018
- Issue Sort Value:
- 2018-0124-2018-0000
- Page Start:
- 248
- Page End:
- 256
- Publication Date:
- 2018-12
- Subjects:
- Semiconductor -- Electronic structure -- Thermoelectric properties -- FP-LAPW
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2018.04.031 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11561.xml