A double snapback SCR ESD protection scheme for 28 nm CMOS process. (May 2018)

• Record Type: Journal Article
• Authors: Hu, Tao; Dong, Shurong; Jin, Hao; Wong, Hei; Xu, Zekun; Li, Xiang; Liou, Juin J.
• Is Part Of: Microelectronics and reliability. Volume 84(2018)
• Page Start: 20
• Page End: 25
• Publication Date: 2018-05
• Subjects: Electrostatic discharge -- 28 nm technology -- Double snapback SCR; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.03.010
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This work proposes a novel double-snapback silicon-controlled rectifier (DS-SCR) electrostatic discharge protection (ESD) device by using an embedded GGNMOS structure. With the double snapback mechanism, the proposed DS-SCR achieves a high ESD robustness with a current level of 33.0 mA/μm. In addition, the low trigger and high holding voltages make the DS-SCR structure to have high potential for using in 28 nm CMOS process ESD protection. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via TCAD simulations and experimental validations. Highlights: Low trigger voltage and high holding voltage make the DS-SCR structure be suitable for ESD protection for 28 nm CMOS process. Double snapback mechanism is shown in Transmission Line Pulse test of device. High robust DS-SCR device for on-chip ESD protection.