Characterization of bilayer AZO film grown by low-damage sputtering for Cu(In, Ga)Se2 solar cell with a CBD-ZnS buffer layer. (July 2018)
- Record Type:
- Journal Article
- Title:
- Characterization of bilayer AZO film grown by low-damage sputtering for Cu(In, Ga)Se2 solar cell with a CBD-ZnS buffer layer. (July 2018)
- Main Title:
- Characterization of bilayer AZO film grown by low-damage sputtering for Cu(In, Ga)Se2 solar cell with a CBD-ZnS buffer layer
- Authors:
- Lee, Woo-Jung
Cho, Dae-Hyung
Wi, Jae-Hyung
Han, Won Seok
Kim, Boo-Kyoung
Choi, Sang Dae
Baek, Ju-Yeoul
Chung, Yong-Duck - Abstract:
- Abstract: Chemical bath deposition (CBD)-ZnS is used as a buffer layer for Cu(In, Ga)Se2 (CIGS) solar cell and then, plasma damage originated from the negative oxygen ions or neutral particles with high energy is regarded as an important issue during subsequent deposition of window layer by sputtering process. To avoid negative plasma effects, we newly designed sputtering system with dual deposition mode of low damage sputtering (LDS) process and direct sputtering (DS) process, adjusting plasma direction by dual cylindrical targets. It allows to grow bilayer AZO film by sequentially depositing thin LDS AZO film as a protect layer and thick AZO film as a transparent conducting layer to collect electrons. The physical and electrical characteristics of bilayer AZO film were investigated to verify the positive effect against plasma damage. In plasma damage test using GaAs wafer, we observed that increase of sputtering power leads to a falling-off in electrical qualities by plasma damage. For practical solar cell application, we fabricated three types of CIGS/CBD-ZnS solar cells with LDS AZO film grown at 2 kW and 5 kW (by 1500 mm cylindrical targets) and Conventional-AZO film (by 4-in. circular targets), and demonstrated that the performance of CIGS solar cell with LDS AZO is superior to that with Conventional-AZO film due to the effective protection layer to relieve plasma damage.
- Is Part Of:
- Materials science in semiconductor processing. Volume 81(2018)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 81(2018)
- Issue Display:
- Volume 81, Issue 2018 (2018)
- Year:
- 2018
- Volume:
- 81
- Issue:
- 2018
- Issue Sort Value:
- 2018-0081-2018-0000
- Page Start:
- 48
- Page End:
- 53
- Publication Date:
- 2018-07
- Subjects:
- CIGS solar cell -- CBD-ZnS buffer layer -- Low damage sputtering process -- Bilayer AZO film
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2018.03.008 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11562.xml