Construction of Schottky junction solar cell using silicon nanowires and multi-layered graphene. (February 2019)

• Record Type: Journal Article
• Authors: Lin, Yu-Keng; Hong, Yu-Ting; Shyue, Jing-Jong; Hsueh, Chun-Hway
• Is Part Of: Superlattices and microstructures. Volume 126(2019)
• Page Start: 42
• Page End: 48
• Publication Date: 2019-02
• Subjects: Schottky junction solar cell -- Silicon nanowires -- Graphene -- Metal-assisted chemical etching; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.12.015
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Schottky junction solar cells based on n-type silicon nanowires (SiNWs) and multi-layered graphene were assembled. The textured substrates enhanced the light-harvesting compared to the planar substrates. Multi-layered graphene films produced by chemical vapor deposition and layer-by-layer stacking mitigated damages and increased the work function of graphene. Thus, both the power conversion efficiency and fill factor of Schottky junction solar cells could be improved with multi-layered graphene. It was found in the present study that the optimum photovoltaics performance of solar cells was achieved when double-layered graphene was used. The performance degraded with the number of graphene layers when it was more than 2 layers. While damages could be mitigated and the work function could be improved using multi-layered graphene in SiNWs Schottky junction solar cells, the optical transmittance of graphene would be reduced with excessive number of graphene layers. Graphical abstract: Image 102541 Highlights: We used metal-assisted chemical etching to form Si nanowires. Use Si nanowires and multi-layered graphene to make Schottky junction solar cell. Layer-by-layer stacking ensures better coverage of graphene on silicon nanowires. Optimum photovoltaics performance is achieved for bi-layered graphene device.