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APA Citation
Van Hove, M., Posthuma, N., Geens, K., Wellekens, D., Li, X., & Decoutere, S. (n.d.). impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates. Japanese journal of applied physics, 57, . http://access.bl.uk/ark:/81055/vdc_100087556826.0x000060