Comprehensive analysis of Subthreshold short channel behavior of a Dual-material gate strained trapezoidal FinFET. (May 2018)

• Record Type: Journal Article
• Authors: Banerjee, Pritha; Sarkar, Subir Kumar
• Is Part Of: Superlattices and microstructures. Volume 117(2018)
• Page Start: 527
• Page End: 537
• Publication Date: 2018-05
• Subjects: Trapezoidal FinFET -- Strained Silicon -- Short channel effects -- Subthreshold swing -- Threshold voltage roll-off; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.02.034
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The current research highlights the subthreshold short channel characteristics of a novel structure namely Dual-material gate strained Trapezoidal strained FinFET. Based on the effective channel width and equivalent number of gates (ENG), we have developed a quasi-3-D scaling length model and examined device characteristics like potential and electric field. The response of the device towards the various short channel effects has also been studied in depth. The analytical results obtained have been verified using 3-D numerical device simulation results. Highlights: The subthreshold short channel study of DMG strained Tz FinFET is presented. The threshold voltage and electric field features of the structure are studied using the expression of central bottom potential. The research highlights the comparison of short channel behavior of the ideal FinFET structures with the real fabricated ones. The calculated and simulated results are in line with each other.