Cite
APA Citation
Shen, L., Müller, S., Cheng, X., Zhang, D., Zheng, L., Xu, D., Yu, Y., Meissner, E., & Erlbacher, T. (2018). the GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM. Superlattices and microstructures, 114, 200–206. http://access.bl.uk/ark:/81055/vdc_100056540624.0x000024