Cite
HARVARD Citation
Shen, L. et al. (2018). The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM. Superlattices and microstructures. pp. 200-206. [Online].
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Shen, L. et al. (2018). The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM. Superlattices and microstructures. pp. 200-206. [Online].