Visible light sensitive cupric oxide metal-semiconductor-metal photodetectors. (January 2018)

• Record Type: Journal Article
• Authors: Raghavendra, P.V.; Bhat, J.S.; Deshpande, N.G.
• Is Part Of: Superlattices and microstructures. Volume 113(2018)
• Page Start: 754
• Page End: 760
• Publication Date: 2018-01
• Subjects: Copper oxide -- CuO -- Electron beam evaporation -- Photodetector -- Responsivity; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.12.014
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: The visible light response of Ag-CuO-Ag metal-semiconductor-metal (MSM) photodetector is presented. Electron beam deposited CuO thin films consisted of tightly packed nanocrystallites in monoclinic phase. The observed red-shifts in indirect band-gap from 1.09 eV to 0.99 eV and direct band-gap from 2.92 eV to 2.87 eV, with annealing temperature, is attributed to the weak quantum confinement effect. CuO thin films annealed at 500 °C have a p-type conductivity of 4.33 × 10 −2 (ohm-cm) −1 and mobility of 13.2 cm 2 /V-s. Significant responsivities of 0.33 mA/W and 0.59 mA/W for blue and red lights, respectively, in Ag-CuO-Ag photodetector are illustrative for using it as visible light sensor. Highlights: Nanostructured CuO thin films were deposited by electron beam evaporation. Red-shifts in optical band-gaps and improvement in electrical properties of CuO with annealing temperature. Ag-CuO-Ag metal-semiconductor-metal (MSM) photodetectors were fabricated. A remarkable photo responses of 0.33 mA/W and 0.59 mA/W for blue and red lights, respectively.