Electronic states and optical properties of single donor in GaN conical quantum dot with spherical edge. (February 2018)
- Record Type:
- Journal Article
- Title:
- Electronic states and optical properties of single donor in GaN conical quantum dot with spherical edge. (February 2018)
- Main Title:
- Electronic states and optical properties of single donor in GaN conical quantum dot with spherical edge
- Authors:
- El Aouami, A.
Feddi, E.
El-Yadri, M.
Aghoutane, N.
Dujardin, F.
Duque, C.A.
Phuc, Huynh Vinh - Abstract:
- Abstract: In this paper we present a theoretical investigation of quantum confinement effects on the electron and single donor states in G a N conical quantum dot with spherical edge. In the framework of the effective mass approximation, the Schrödinger equations of electron and donor have been solved analytically in an infinite potential barrier model. Our calculations show that the energies of electron and donor impurity are affected by the two characteristic parameters of the structure which are the angle Ω and the radial dimension R . We show that, despite the fact that the reduction of the two parameters Ω and R leads to the same confinement effects, the energy remains very sensitive to the variation of the radial part than the variation of the angular part. The analysis of the photoionization cross-section corresponding to optical transitions between the conduction band and the first donor energy level shows clearly that the reduction of the radius R causes a shift in resonance peaks towards the high energies. On the other hand, the optical transitions between 1 s − 1 p, 1 p − 1 d and 1 p − 2 s show that the increment of the conical aperture Ω (or reduction of R ) implies a displacement of the excitation energy to higher energies. Highlights: Electron and single donor states in GaN conical quantum dot. Effective mass approximation with analytical solutions. Photoionization cross-section for impurity-electron transitions. Optical transitions are blue/red shifted withAbstract: In this paper we present a theoretical investigation of quantum confinement effects on the electron and single donor states in G a N conical quantum dot with spherical edge. In the framework of the effective mass approximation, the Schrödinger equations of electron and donor have been solved analytically in an infinite potential barrier model. Our calculations show that the energies of electron and donor impurity are affected by the two characteristic parameters of the structure which are the angle Ω and the radial dimension R . We show that, despite the fact that the reduction of the two parameters Ω and R leads to the same confinement effects, the energy remains very sensitive to the variation of the radial part than the variation of the angular part. The analysis of the photoionization cross-section corresponding to optical transitions between the conduction band and the first donor energy level shows clearly that the reduction of the radius R causes a shift in resonance peaks towards the high energies. On the other hand, the optical transitions between 1 s − 1 p, 1 p − 1 d and 1 p − 2 s show that the increment of the conical aperture Ω (or reduction of R ) implies a displacement of the excitation energy to higher energies. Highlights: Electron and single donor states in GaN conical quantum dot. Effective mass approximation with analytical solutions. Photoionization cross-section for impurity-electron transitions. Optical transitions are blue/red shifted with geometry variations. … (more)
- Is Part Of:
- Superlattices and microstructures. Volume 114(2018)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 114(2018)
- Issue Display:
- Volume 114, Issue 2018 (2018)
- Year:
- 2018
- Volume:
- 114
- Issue:
- 2018
- Issue Sort Value:
- 2018-0114-2018-0000
- Page Start:
- 214
- Page End:
- 224
- Publication Date:
- 2018-02
- Subjects:
- Conical dot -- Donor impurity -- Binding energy -- Photoionization cross-section -- Absorption coefficient
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2017.12.043 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 11471.xml