Scalable MoS2/graphene hetero-structures grown epitaxially on sapphire substrates for phototransistor applications. (16th January 2018)

• Record Type: Journal Article
• Authors: Chen, Hsuan-An; Chen, Wei-Chan; Sun, Hsu; Lin, Chien-Chung; Lin, Shih-Yen
• Is Part Of: Semiconductor science and technology. Volume 33:Number 2(2018:Feb.)
• Publication Date: 2018-01-16
• Subjects: 2D material hetero-structures -- van der Waals epitaxy -- photo-transistors; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aaa3b7
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Bi-layer graphene is grown directly on sapphire substrates by using ethane as the precursor without the assistance of a metal catalyst. A growth model of graphene flake formation in the furnace, followed by a complete film growth is also proposed. Using the graphene/sapphire sample as the new substrate, scalable MoS2 films with good layer number controllability can be grown directly on the substrate. After fabricating the MoS2 /graphene hetero-structures into bottom-gate photo-transistors, a Dirac point shift is observed for the device under the light irradiation condition, which is attributed to the extraction of photo-excited electrons in the MoS2 layer to the graphene channel. The photo-voltaic response observed for the photo-transistors may provide a potential application of the 2D material hetero-structure in thin-film solar cells.