Cite
HARVARD Citation
Atthi, N. et al. (2014). Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering. MRS proceedings. p. . [Online].
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Atthi, N. et al. (2014). Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering. MRS proceedings. p. . [Online].