Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure. (30th August 2017)

• Record Type: Journal Article
• Authors: Knox, C S; Morrison, C; Herling, F; Ritchie, D A; Newell, O; Myronov, M; Linfield, E H; Marrows, C H
• Is Part Of: Semiconductor science and technology. Volume 32:Number 10(2017:Oct.)
• Publication Date: 2017-08-30
• Subjects: InAs/GaSb -- effective mass -- hybridisation; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa827e
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m 0, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m 0, where m 0 is the bare electron mass.