Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots. (12th April 2017)

• Record Type: Journal Article
• Authors: Xie, H; Prioli, R; Torelly, G; Liu, H; Fischer, A M; Jakomin, R; Mourão, R; Kawabata, R; Pires, M P; Souza, P L; Ponce, F A
• Is Part Of: Semiconductor science and technology. Volume 32:Number 5(2017:May)
• Publication Date: 2017-04-12
• Subjects: InAs quantum dots -- optical properties of quantum dots -- size distribution of quantum dots -- intermediate-band solar cells; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa6471
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: InAs QDs embedded in an AlGaAs matrix have been produced by MOVPE with a partial capping and annealing technique to achieve controllable QD energy levels that could be useful for solar cell applications. The resulted spool-shaped QDs are around 5 nm in height and have a log-normal diameter distribution, which is observed by TEM to range from 5 to 15 nm. Two photoluminescence peaks associated with QD emission are attributed to the ground and the first excited states transitions. The luminescence peak width is correlated with the distribution of QD diameters through the diameter dependent QD energy levels.