Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators. (6th December 2017)
- Record Type:
- Journal Article
- Title:
- Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators. (6th December 2017)
- Main Title:
- Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators
- Authors:
- Martín-Sánchez, Javier
Trotta, Rinaldo
Mariscal, Antonio
Serna, Rosalía
Piredda, Giovanni
Stroj, Sandra
Edlinger, Johannes
Schimpf, Christian
Aberl, Johannes
Lettner, Thomas
Wildmann, Johannes
Huang, Huiying
Yuan, Xueyong
Ziss, Dorian
Stangl, Julian
Rastelli, Armando - Abstract:
- Abstract: The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3 Nb2/3 )O3 –PbTiO3 -based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials' emission properties such as their emissionAbstract: The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3 Nb2/3 )O3 –PbTiO3 -based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials' emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed. … (more)
- Is Part Of:
- Semiconductor science and technology. Volume 33:Number 1(2018:Jan.)
- Journal:
- Semiconductor science and technology
- Issue:
- Volume 33:Number 1(2018:Jan.)
- Issue Display:
- Volume 33, Issue 1 (2018)
- Year:
- 2018
- Volume:
- 33
- Issue:
- 1
- Issue Sort Value:
- 2018-0033-0001-0000
- Page Start:
- Page End:
- Publication Date:
- 2017-12-06
- Subjects:
- piezoelectric actuators -- elastic strain engineering -- quantum dots -- 2D materials -- photoluminescence
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-6641/aa9b53 ↗
- Languages:
- English
- ISSNs:
- 0268-1242
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11390.xml