Bipolar integrated circuits in SiC for extreme environment operation. (13th February 2017)

• Record Type: Journal Article
• Authors: Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B Gunnar; Mardani, Shabnam; Norström, Hans; Rusu, Ana; Suvanam, Sethu Saveda; Tian, Ye; Östling, Mikael
• Is Part Of: Semiconductor science and technology. Volume 32:Number 3(2017:Mar.)
• Publication Date: 2017-02-13
• Subjects: SiC -- integrated circuit -- high temperature -- radiation hardness -- bipolar technology; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa59a7
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Silicon carbide (SiC) integrated circuits have been suggested for extreme environment operation. The challenge of a new technology is to develop process flow, circuit models and circuit designs for a wide temperature range. A bipolar technology was chosen to avoid the gate dielectric weakness and low mobility drawback of SiC MOSFETs. Higher operation temperatures and better radiation hardness have been demonstrated for bipolar integrated circuits. Both digital and analog circuits have been demonstrated in the range from room temperature to 500 °C. Future steps are to demonstrate some mixed signal circuits of greater complexity. There are remaining challenges in contacting, metallization, packaging and reliability.