High-power broad-area buried-mesa lasers. (15th May 2017)

• Record Type: Journal Article
• Authors: Della Casa, P; Brox, O; Decker, J; Winterfeldt, M; Crump, P; Wenzel, H; Weyers, M
• Is Part Of: Semiconductor science and technology. Volume 32:Number 6(2017:Jun.)
• Publication Date: 2017-05-15
• Subjects: MOCVD -- semiconductor laser -- broad-area lasers -- high-power lasers; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa6e9b
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Broad area lasers emitting near 940 nm are fabricated using a process based on two-step epitaxy. The n-side of the layer structure and the active layer are grown during the first epitaxial step, the p-side during the second. Between the first and the second step a shallow etching is used to remove the active layer from the two sides and at the two facets. This simple approach allows the creation of buried mesa lasers with non-absorbing mirrors, resulting in a reduced lateral current leakage, lower threshold current and higher efficiency, plus an increased robustness with respect to catastrophic optical damage.