Large bandgap reduced graphene oxide (rGO) based n-p+ heterojunction photodetector with improved NIR performance. (20th March 2018)

• Record Type: Journal Article
• Authors: Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P; Pal, Prabir; Singh, Surinder P
• Is Part Of: Semiconductor science and technology. Volume 33:Number 4(2018:Apr.)
• Publication Date: 2018-03-20
• Subjects: 2D materials -- near-infrared -- optoelectronics -- photodiodes; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aab2d9
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n -rGO/ p + -Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W −1 and peak detectivity of 2.56 × 10 12 Jones under 830 nm illumination (11 μ W cm −2 ) at 1 V applied bias with fast response (∼460 μ s) and recovery time (∼446 μ s). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 10 3 %), along with ultrasensitive behavior at low light conditions.