Total ionizing dose effects in multiple-gate field-effect transistor. (3rd July 2017)

• Record Type: Journal Article
• Authors: Gaillardin, Marc; Marcandella, Claude; Martinez, Martial; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Richard, Nicolas
• Is Part Of: Semiconductor science and technology. Volume 32:Number 8(2017:Aug.)
• Publication Date: 2017-07-03
• Subjects: total ionizing dose -- bulk silicon -- SOI -- FinFET -- nanowire -- multiple-gate -- gate-all-around; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa6c02
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This paper focuses on total ionizing dose (TID) effects induced in multiple-gate field-effect transistors. The impact of device architecture, geometry and scaling on the TID response of multiple-gate transistors is reviewed in both bulk and silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technologies. These innovating devices exhibit specific ionizing dose responses which strongly depend on their three-dimensional nature. Their TID responses may look like the one usually observed in planar two-dimensional bulk or SOI transistors, but multiple-gate devices can also behave like any other CMOS device.