Cite
HARVARD Citation
Das, R. et al. (2018). Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET. Microelectronics journal. pp. 153-159. [Online].
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Das, R. et al. (2018). Analytical model of surface potential and threshold voltage in gate-drain overlap FinFET. Microelectronics journal. pp. 153-159. [Online].