Cite
APA Citation
Karboyan, S., Uren, M. J., Manikant, , Pomeroy, J. W., & Kuball, M. (2018). on the origin of dynamic Ron in commercial GaN-on-Si HEMTs. Microelectronics and reliability, 81, 306–311. http://access.bl.uk/ark:/81055/vdc_100056441857.0x00005e