Cite
HARVARD Citation
Karboyan, S. et al. (2018). On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. Microelectronics and reliability. pp. 306-311. [Online].
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Karboyan, S. et al. (2018). On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. Microelectronics and reliability. pp. 306-311. [Online].