Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: influence of rapid thermal annealing. (7th September 2018)
- Record Type:
- Journal Article
- Title:
- Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: influence of rapid thermal annealing. (7th September 2018)
- Main Title:
- Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: influence of rapid thermal annealing
- Authors:
- Ullah, Sana
Branquinho, Rita
Santa, Ana
De Matteis, Fabio
Martins, Rodrigo
Davoli, Ivan
Gonçalves, Gonçalo
Fortunato, Elvira - Abstract:
- Abstract: IZO thin films with In:Zn ratio of 7:3 and 3:7 were prepared by solution combustion synthesis of metal oxide nitrates and influence of post-deposition rapid thermal annealing (RTA) was studied. Individual 0.5 M indium and zinc oxide precursor solutions were mixed in 7:3 and 3:7 compositions. XRD analysis showed IZO 7:3 composition has only cubic bixbyite In2 O3 structure while IZO 3:7 composition showed both hexagonal wurtzite ZnO and cubic bixbyite In2 O3 phases. SEM and AFM analysis showed low roughness for IZO 7:3, rms < 2 nm whereas for IZO 3:7 composition surface roughness was >22 nm due to phase segregation. UV/ViS/NIR analysis showed transparency range desirable of transparent conductors for both compositions. Post-deposition RTA treatment resulted in high conductivity single phase IZO 7:3 films. Segregation of phases enhanced carrier scattering resulting in decreased mobility for IZO 3:7 films. Best performing IZO films demonstrated low resistivity 7.66 × 10 −3 Ohm cm and high carrier concentration 5.09 × 10 19 /cm 3 after 10 min RTA at 600 °C. These results demonstrate combustion synthesis and RTA are successful for development of films with enhanced conductivity and transparency through low cost vacuum-free synthesis reducing indium content for applications in photovoltaic devices, flat panel displays and transparent electronics.
- Is Part Of:
- Semiconductor science and technology. Volume 33:Number 10(2018:Oct.)
- Journal:
- Semiconductor science and technology
- Issue:
- Volume 33:Number 10(2018:Oct.)
- Issue Display:
- Volume 33, Issue 10 (2018)
- Year:
- 2018
- Volume:
- 33
- Issue:
- 10
- Issue Sort Value:
- 2018-0033-0010-0000
- Page Start:
- Page End:
- Publication Date:
- 2018-09-07
- Subjects:
- IZO -- solution combustion synthesis -- transparent conducting oxides -- rapid thermal annealing
Semiconductors -- Periodicals
621.38152 - Journal URLs:
- http://iopscience.iop.org/0268-1242/1 ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.1088/1361-6641/aad5cc ↗
- Languages:
- English
- ISSNs:
- 0268-1242
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 11286.xml