A triangular triple quantum dot with tunable tunnel couplings. (19th July 2017)

• Record Type: Journal Article
• Authors: Noiri, A; Kawasaki, K; Otsuka, T; Nakajima, T; Yoneda, J; Amaha, S; Delbecq, M R; Takeda, K; Allison, G; Ludwig, A; Wieck, A D; Tarucha, S
• Is Part Of: Semiconductor science and technology. Volume 32:Number 8(2017:Aug.)
• Publication Date: 2017-07-19
• Subjects: semiconductor quantum dot -- two-dimensional array -- tunnel coupling -- Aharonov–Bohm oscillation; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa7596
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: A two-dimensional arrangement of quantum dots (QDs) with finite inter-dot tunnel coupling provides a promising platform for studying complicated spin correlations as well as for constructing large-scale quantum computers. Here, we fabricate a tunnel-coupled triangular triple QD with a novel gate geometry in which three dots are defined by positively biasing the surface gates. At the same time, the small area in the center of the triangle is depleted by negatively biasing the top gate placed above the surface gates. The size of the small center depleted area is estimated from the Aharonov–Bohm oscillation measured for the triangular channel but incorporating no gate-defined dots, with a value consistent with the design. With this approach, we can bring the neighboring gate-defined dots close enough to one another to maintain a finite inter-dot tunnel coupling. We finally confirm the presence of the inter-dot tunnel couplings in the triple QD from the measurement of tunneling current through the dots in the stability diagram. We also show that the charge occupancy of each dot and that the inter-dot tunnel couplings are tunable with gate voltages.