Cite
MLA Citation
Yongsheng Bao et al.. “Flexible nonvolatile resistive switching memory devices based on Bi2Te3 nanosheets films.” Journal of physics, vol. 52, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100087557699.0x00005d
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Yongsheng Bao et al.. “Flexible nonvolatile resistive switching memory devices based on Bi2Te3 nanosheets films.” Journal of physics, vol. 52, 2019, p. . http://access.bl.uk/ark:/81055/vdc_100087557699.0x00005d