Cite
HARVARD Citation
Bao, Y. et al. (2019). Flexible nonvolatile resistive switching memory devices based on Bi2Te3 nanosheets films. Journal of physics. p. . [Online].
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Bao, Y. et al. (2019). Flexible nonvolatile resistive switching memory devices based on Bi2Te3 nanosheets films. Journal of physics. p. . [Online].