A comparative study of n-channel low temperature poly-Si thin-film transistors with a body terminal or a lightly-doped-drain structure. (10th January 2018)

• Record Type: Journal Article
• Authors: Wu, Yanwen; Wang, Mingxiang; Wang, Huaisheng; Zhang, Dongli
• Is Part Of: Semiconductor science and technology. Volume 33:Number 2(2018:Feb.)
• Publication Date: 2018-01-10
• Subjects: low temperature poly-Si (LTPS) -- thin-film transistor (TFT) -- lateral body terminal -- hot carrier (HC); Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aaa141
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Hot-carrier (HC) induced degradation is a critical reliability issue of n-channel low temperature poly-Si thin-film transistors (TFTs) in TFT-based circuits. In this work, a kind of four-terminal TFT, which has an additional p + -doped lateral body terminal connecting to the floating channel, is systematically compared to conventional n-channel TFT and lightly-doped-drain (LDD) TFT. We demonstrate that the four-terminal TFT can provide similar advantages to that of the LDD TFT such as kink current suppression and DC HC degradation immunity, much superior immunity to the dynamic HC degradation, but without any tradeoffs in device performance and process complexity of the LDD TFT. It has high performance, as well as excellent reliability under both DC and AC conditions.