Electron transport in some transition metal di-chalcogenides: MoS2 and WS2. (4th July 2017)

• Record Type: Journal Article
• Authors: Ferry, D K
• Is Part Of: Semiconductor science and technology. Volume 32:Number 8(2017:Aug.)
• Publication Date: 2017-07-04
• Subjects: electron transport -- phonon scattering -- devices -- nanostructures; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aa7472
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The transition metal di-chalcogenides are promising single monolayer materials that hold promise for applications in several fields, including nanoelectronics. Here, I study the transport of electrons in two of these materials, MoS2 and WS2 . While the low-field behavior shows very low mobility, due mostly to impurity scattering, the high-field behavior shows a relatively high saturated velocity and a high breakdown field. Complications arise due to the relative narrowness of the conduction band, and the effect of this on the transport is discussed.