Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications. (15th February 2018)

• Record Type: Journal Article
• Authors: Tsai, Meng-Chen; Wang, Chin-I; Chen, Yen-Chang; Chen, Yi-Ju; Li, Kai-Shin; Chen, Min-Cheng; Chen, Miin-Jang
• Is Part Of: Semiconductor science and technology. Volume 33:Number 3(2018:Mar.)
• Publication Date: 2018-02-15
• Subjects: FinFET -- short channel effects -- high-K gate dielectrics -- drain induced barrier lowering -- subthreshold swing; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aaab01
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: The electrical characteristics of FinFETs with a crystalline ZrO2 /Al2 O3 buffer layer gate stack and a crystalline ZrO2 high- K dielectric single layer, along with different fin widths and gate lengths, are investigated. Compared with the FinFETs with a single layer of crystalline ZrO2 high- K dielectric, the gate stack comprising the crystalline ZrO2 /Al2 O3 buffer layer on FinFETs leads to the suppression of short channel effects in terms of a low drain induced barrier lowering, reduced threshold voltage roll-off, and improved subthreshold swing. The ON/OFF current ratio and gate leakage current of FinFETs are also improved by the crystalline ZrO2 /Al2 O3 buffer layer gate stack. The improvement of electrical characteristics is ascribed to the reduced interface state density and gate leakage as a result of the insertion of an Al2 O3 buffer layer between ZrO2 and Si. The results demonstrate that the crystalline ZrO2 /Al2 O3 buffer layer structure is a promising high- K gate stack for next-generation nanoscale transistors.